When these issues occur, they are called read disturb errors. In this paper, we propose a novel integrated approach for managing the read-disturb problem. Lateral charge migration induced abnormal read disturb in 3D charge-trapping NAND flash memory Fei Wang†, Rui Cao†, Yachen Kong, Xiaolei Ma , Xuepeng Zhan, Yuan Li, and Jiezhi Chen* School of Information Science and Engineering, Shandong University, Qingdao 266237, People’s Republic of China *E-mail: chen.jiezhi@sdu.edu.cn Note that, in this read-disturb measurement, one read cycle is defined as the whole block (86 WLs) read. Search for "nand flash read disturb" on Google for example, it will give plenty of articles on the matter, for example this at Micron, or this at SanDisk. The read-disturb problem is emerging as one of the main reliability issues for future high-density NAND flash memory. Improving Read Disturb Characteristics by Self-Boosting Read Scheme for Multilevel NAND Flash Memories Myounggon Kang, Ki-Tae Park, Youngsun Song, Soonwook Hwang, Byung Yong Choi, Yunheub Song1, Yeong-Taek Lee, and Changhyun Kim Memory R&D Center, Memory Business, Samsung Electronics Co., Ltd., San #14, Banwol-dong, Hwasung, Kyunggi-do 445-701, Korea 1Department of … The cells in NAND memory are strung together in a line that is similar to a multi-input NAND gate. Cell Failure Density (CDF) extrapolation from experimental data using statistical method is able to estimate defect probability and application’s failure rate for both SILC and weak tunnel oxide quality cases. NAND flash memory reliability continues to degrade as the memory is scaled down and more bits are programmed per cell. A read-disturb error, which causes data loss, occurs to data in a page when a large number of reads are performed to its neighboring pages in the same block. A detailed explanation of each type of errors follows. A key contributor to this reduced re A key contributor to this reduced re Read Disturb Errors in MLC NAND Flash Memory: Characterization, Mitigation, and Recovery - … A read-disturb error, which causes data loss, occurs to a page when a large number of reads are performed to its neighboring pages. Read Disturb Errors in MLC NAND Flash Memory: Characterization, Mitigation, and Recovery Yu Cai, Yixin Luo, Saugata Ghose, Erich F. Haratsch*, Ken Mai, Onur Mutlu Carnegie Mellon University, *Seagate Technology.

In a read disturb, since a relatively high voltage is applied to non-selected word lines within a selected block (selected segments), memory cells, which are connected to non-selected word lines, assume a light programming operation state during a read operation. Memory Wear A Read-Disturb Management Technique for High-Density NAND Flash Memory Keonsoo Ha, Jaeyong Jeong, and Jihong Kim Department of Computer Science and Engineering, Seoul National University, Korea {air21c, jyjeong, jihong}@davinci.snu.ac.krAbstract The read-disturbproblemis emergingasoneof the … Read-only flash memory can occur in multiple applications, but is particularly common in gaming.

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